• DocumentCode
    1097155
  • Title

    Electrothermal failure safety of TIL GTO thyristors

  • Author

    Silard, A.P.

  • Author_Institution
    Polytechnic Institute, Bucharest, Romania
  • Volume
    5
  • Issue
    8
  • fYear
    1984
  • fDate
    8/1/1984 12:00:00 AM
  • Firstpage
    338
  • Lastpage
    341
  • Abstract
    The work presents the main dynamic characteristics testifying to the built-in electrothermal failure-safe features of 4 × 4 mm area TO-220-packed two-interdigitation-level (TIL) GTO thyristors. It is shown that 1) a fairly good and stable current balance between the interdigitated fingers is preserved during both the turn-off and turn-on; 2) the temperature rise in the structure of TIL GTO´s is kept within safe limits under high-voltage/high-current conditions; 3) the final dimensions of the anode current crowding zone are large enough thus limiting the density of power dissipated during transient turn-off. Thanks to these self-protective features, the developed TIL GTO´s possess the highest value of the peak interruptable anode current IATO(60 A) ever reported in the open literature for this class of GTO´s (identical device area and case) and could safely operate at high commutation frequencies under heavy load conditions.
  • Keywords
    Anodes; Electrothermal effects; Fingers; Frequency; Helium; Proximity effect; Safety; Temperature; Testing; Thyristors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25937
  • Filename
    1484313