DocumentCode
1097232
Title
Effects of channel geometries on FET output conductance in saturation
Author
Riccò, B.
Author_Institution
IBM, Thomas J. Watson Research Center, Yorktown Heights, NY
Volume
5
Issue
9
fYear
1984
fDate
9/1/1984 12:00:00 AM
Firstpage
353
Lastpage
356
Abstract
This work presents an experimental and theoretical study of the effects of nonrectangular channel geometries on FET electrical characteristics. In particular it is shown that substantial variations of the channel width in vicinity of the drain have significant consequences on the output conductance in saturation. It is, consequently, suggested that the channel geometry can be considered as a further relevant design parameter, to be used in controlling excessive output conductance.
Keywords
Analytical models; Electric variables; FETs; Geometry; Hall effect; Magnetic analysis; Nonvolatile memory; Numerical simulation; Shape; Silicon;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1984.25944
Filename
1484320
Link To Document