• DocumentCode
    1097232
  • Title

    Effects of channel geometries on FET output conductance in saturation

  • Author

    Riccò, B.

  • Author_Institution
    IBM, Thomas J. Watson Research Center, Yorktown Heights, NY
  • Volume
    5
  • Issue
    9
  • fYear
    1984
  • fDate
    9/1/1984 12:00:00 AM
  • Firstpage
    353
  • Lastpage
    356
  • Abstract
    This work presents an experimental and theoretical study of the effects of nonrectangular channel geometries on FET electrical characteristics. In particular it is shown that substantial variations of the channel width in vicinity of the drain have significant consequences on the output conductance in saturation. It is, consequently, suggested that the channel geometry can be considered as a further relevant design parameter, to be used in controlling excessive output conductance.
  • Keywords
    Analytical models; Electric variables; FETs; Geometry; Hall effect; Magnetic analysis; Nonvolatile memory; Numerical simulation; Shape; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25944
  • Filename
    1484320