Corrections to “Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors” [Jul 13 2128-2134]

Author

Verreck, D. ; Verhulst, Anne S. ; Kao, Kuo-Hsing ; Vandenberghe, W.G. ; De Meyer, K. ; Groeseneken, Guido

Author_Institution

imec, Leuven, Belgium

Volume

Issue

fYear

2013

fDate

Oct. 2013

Firstpage

3605

Lastpage

3605

Abstract

The above-named article [ibid., vol. 60, no. 7, pp. 2128-134, Jul. 2013] contains an error in the legend of Fig. 11. The correct version is provided.

Keywords

Field effect transistors; Junctions; Quantum theory; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/TED.2013.2278209

Filename

6588911

Link To Document