Title :
Admittance measurements on In0.53Ga0.47As/InP:Fe-JFET´s and GaAs-MESFET´s
Author_Institution :
Siemens Research Laboratories, Munchen, West Germany
fDate :
10/1/1984 12:00:00 AM
Abstract :
Admittance measurements as a function of frequency and voltage on field-effect transistor (FET) channels of In0.53Ga0.47As/InP: Fe-JFET´s and GaAs-MESFET´s are reported. Theoretical and experimental investigations of the conductance and susceptance show that only three independent parameters, like space-charge capacitance, series resistance, and differential resistance, are needed to describe the measured results in the entire voltage and frequency range of investigation.
Keywords :
Admittance measurement; Capacitance measurement; Contact resistance; Electrical resistance measurement; FETs; Frequency measurement; Gallium arsenide; Indium phosphide; Parasitic capacitance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25966
