DocumentCode :
1097460
Title :
The effect of active layer thickness on lateral waveguiding in narrow-stripe gain-guided AlGaAs DH laser diodes
Author :
Biesterbos, Johannes W M ; Brouwer, Rex P. ; Valster, Adriaan ; De Poorter, Jan A. ; Acket, Gerard A.
Author_Institution :
Philips Research Labs., Eindhoven, The Netherlands
Volume :
19
Issue :
6
fYear :
1983
fDate :
6/1/1983 12:00:00 AM
Firstpage :
961
Lastpage :
965
Abstract :
It has been found that the thickness of the active layer has an important influence on the width of the far-field distribution parallel to the active layer of narrow-stripe AlGaAs lasers. Furthermore, for very thin active layers, thermal effects may show up as a result of internal temperature gradients. The influence of the laser output power has also been investigated. It is found that the far field distribution becomes narrower at higher output. All these effects can be quantitatively described as being due to an effective reduction of the anti-guiding parallel to the plane of the active layer.
Keywords :
Aluminum materials/devices; Gallium materials/lasers; DH-HEMTs; Diode lasers; Laser modes; Laser stability; Power generation; Power lasers; Protons; Refractive index; Temperature; Zinc;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1983.1071975
Filename :
1071975
Link To Document :
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