Quantum effects of electrons and holes in the MOSFET inversion layer

Based on the study of mobility degradation due to the gate field, two different mechanisms of the quantum effects are proposed for inversion carriers: i) the quantization of inversion carriers and the populating of the upper sub-bands, which tend to increase the dependence of mobility on the gate field; and ii) the quantum mechanical channel broadening, which tends to decrease the dependence of mobility on the gate field. Experimental data for electrons and holes at 25 and 125°C will be reported and analyzed.