DocumentCode :
109804
Title :
Observation of second flexural mode enhancement in graphene resonators
Author :
Chen, T. ; Mastropaolo, E. ; Bunting, A. ; Cheung, R.
Author_Institution :
Scottish Microelectron. Centre, Univ. of Edinburgh, Edinburgh, UK
Volume :
51
Issue :
13
fYear :
2015
fDate :
6 25 2015
Firstpage :
1014
Lastpage :
1016
Abstract :
The enhancement of the second flexural mode in a monolayer graphene resonator by an inhomogeneous electrostatic actuation force has been observed. The devices have been fabricated by transferring the graphene onto a poly-Si/SiO2/Si substrate whereby the poly-Si has been released to produce graphene resonators. Enhancement of the second harmonic has been demonstrated by varying the actuation voltage, achieving an amplitude enhancement of up to 95% of the fundamental mode. The reported findings open new perspectives for graphene resonant sensors with enhanced sensitivity.
Keywords :
electrostatics; graphene devices; monolayers; resonators; silicon compounds; C; Si-SiO2-Si; actuation voltage; amplitude enhancement; graphene resonant sensors; inhomogeneous electrostatic actuation force; monolayer graphene resonator; polysilicon; second flexural mode enhancement; second harmonic;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2015.0361
Filename :
7130846
Link To Document :
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