Title :
Observation of second flexural mode enhancement in graphene resonators
Author :
Chen, T. ; Mastropaolo, E. ; Bunting, A. ; Cheung, R.
Author_Institution :
Scottish Microelectron. Centre, Univ. of Edinburgh, Edinburgh, UK
Abstract :
The enhancement of the second flexural mode in a monolayer graphene resonator by an inhomogeneous electrostatic actuation force has been observed. The devices have been fabricated by transferring the graphene onto a poly-Si/SiO2/Si substrate whereby the poly-Si has been released to produce graphene resonators. Enhancement of the second harmonic has been demonstrated by varying the actuation voltage, achieving an amplitude enhancement of up to 95% of the fundamental mode. The reported findings open new perspectives for graphene resonant sensors with enhanced sensitivity.
Keywords :
electrostatics; graphene devices; monolayers; resonators; silicon compounds; C; Si-SiO2-Si; actuation voltage; amplitude enhancement; graphene resonant sensors; inhomogeneous electrostatic actuation force; monolayer graphene resonator; polysilicon; second flexural mode enhancement; second harmonic;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.0361