Deep Traps Induced by 700 keV Protons in CdTe and CdZnTe Detectors

Author

Fraboni, Beatrice ; Cavallini, Anna ; Auricchio, Natalia ; Bianconi, Marco

Author_Institution

Bologna Univ., Bologna

Volume

54

Issue

4

fYear

2007

Firstpage

828

Lastpage

833

Abstract

We have studied the effects of 700 keV protons at increasing fluences (up to 2times10¹² p/cm²) on CdTe:Cl and Cd_0.9Zn_0.1Te detectors. The charge transport properties of the detectors have been studied by mobility-lifetime (mutau) product measurements, gamma spectroscopy and photo induced current transient spectroscopy (PICTS) analyses. The correlation of the macroscopic transport behaviour with the information on the microscopic defective states allowed for the identification of the role played by the dominant traps: levels Z and H1 resulted related to electron trapping effects, while levels K and X showed a hole trapping character.

Keywords

deep levels; electron mobility; electron traps; gamma-ray spectra; hole traps; proton effects; semiconductor counters; Cd_0.9Zn_0.1Te detectors; CdTe:Cl detectors; PICTS; charge transport properties; deep levels; electron trapping effects; gamma spectroscopy; hole trapping; macroscopic transport behaviour; mobility-lifetime product; photo induced current transient spectroscopy; proton irradiation; Charge measurement; Current measurement; Electron traps; Gamma ray detection; Gamma ray detectors; Protons; Spectroscopy; Tellurium; Transient analysis; Zinc; Charge carrier transport; deep levels; mobility-lifetime product; radiation effects; room temperature detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.902364

Filename

4291726