DocumentCode :
1098440
Title :
GaAlAs p-i-n junction waveguide modulator
Author :
Lengyel, G. ; Lengyel, G.
Author_Institution :
Univ. of Rhode Island, Kinston, RI, USA
Volume :
1
Issue :
1
fYear :
1983
fDate :
3/1/1983 12:00:00 AM
Firstpage :
251
Lastpage :
255
Abstract :
Optical communications systems often require modulating elements which change the intensity, phase, or polarization of the light. A waveguide modulator has been fabricated in the form of a GaAlAs p-i-n heterostrueture grown on the
Keywords :
Gallium materials/devices; Optical modulation/demodulation; Optical waveguides; p-i-n diodes; Crystallography; Intensity modulation; Optical fiber polarization; Optical modulation; Optical polarization; Optical waveguides; PIN photodiodes; Transmission line matrix methods; Voltage; Waveguide junctions;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1983.1072063
Filename :
1072063
Link To Document :
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