Single-pulse pump-probe measurement of optical nonlinear properties in GaAs/AlGaAs multiple quantum wells

Author

Kawase, M. ; Garmire, E. ; Lee, H.C. ; Dapkus, P.D.

Author_Institution

Center for Laser Studies, Univ. of Southern California, Los Angeles, CA, USA

Volume

30

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

981

Lastpage

988

Abstract

Single-pulse ps-pump and ns-probe nonlinear transmission measurements provide carrier-density-dependent optical nonlinear spectra in GaAs/AlGaAs multiple quantum wells grown by metalorganic chemical vapor deposition. The use of the ps pump eliminates the need to know carrier lifetime to determine carrier density. The saturation behavior of changes in absorption coefficient and refractive index are modeled by a simple saturation equation to obtain saturation carrier density. The saturation spectra for different well thicknesses are obtained. The minimum saturation carrier density appears around 150 Å

Keywords

III-V semiconductors; aluminium compounds; carrier density; carrier lifetime; gallium arsenide; high-speed optical techniques; optical pumping; optical saturation; semiconductor quantum wells; GaAs-AlGaAs; GaAs/AlGaAs multiple quantum wells; absorption coefficient; carrier density; carrier-density-dependent optical nonlinear spectra; metalorganic chemical vapor deposition; minimum saturation carrier density; nonlinear transmission measurements; ns-probe; optical nonlinear properties; ps-pump; saturation behavior; saturation spectra; single-pulse pump-probe measurement; well thicknesses; Absorption; Charge carrier density; Charge carrier lifetime; Chemical vapor deposition; Gallium arsenide; Nonlinear optics; Optical pumping; Optical refraction; Optical saturation; Optical variables control;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.291369

Filename

291369