Title :
A study of the compositional transition layer in In1-xGaxAsyP1-yinP heterojunction interface
Author :
Gong, X.C. ; Li, M.D. ; Zhu, R.M. ; Chen, Y.X.
Author_Institution :
Shanghai Jiao Tong University, Shanghai, China
fDate :
9/1/1983 12:00:00 AM
Abstract :
The atomic concentration of each composition of a thin quaternary layer grown by the two-phase supercooling LPE does not vary with the depth. The atomic concentration in the compositional transition layer versus the depth can be formulated as a hyperbolic tangent function which fits the experimental data very well.
Keywords :
Electron spectroscopy; Indium materials/devices; Atomic layer deposition; Boats; Electrons; Epitaxial growth; Furnaces; Heterojunctions; Indium phosphide; Spectroscopy; Sputtering; Substrates;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.1983.1072143
