• DocumentCode
    1099298
  • Title

    A study of the compositional transition layer in In1-xGaxAsyP1-yinP heterojunction interface

  • Author

    Gong, X.C. ; Li, M.D. ; Zhu, R.M. ; Chen, Y.X.

  • Author_Institution
    Shanghai Jiao Tong University, Shanghai, China
  • Volume
    1
  • Issue
    3
  • fYear
    1983
  • fDate
    9/1/1983 12:00:00 AM
  • Firstpage
    483
  • Lastpage
    485
  • Abstract
    The atomic concentration of each composition of a thin quaternary layer grown by the two-phase supercooling LPE does not vary with the depth. The atomic concentration in the compositional transition layer versus the depth can be formulated as a hyperbolic tangent function which fits the experimental data very well.
  • Keywords
    Electron spectroscopy; Indium materials/devices; Atomic layer deposition; Boats; Electrons; Epitaxial growth; Furnaces; Heterojunctions; Indium phosphide; Spectroscopy; Sputtering; Substrates;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.1983.1072143
  • Filename
    1072143
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1099298