DocumentCode :
1099423
Title :
Dopant-Segregated Schottky Silicon-Nanowire MOSFETs With Gate-All-Around Channels
Author :
Chin, Yoke King ; Pey, Kin-Leong ; Singh, Navab ; Lo, Guo-Qiang ; Tan, Khing Hong ; Ong, Chio-Yin ; Tan, L.H.
Volume :
30
Issue :
8
fYear :
2009
Firstpage :
843
Lastpage :
845
Abstract :
In this letter, we demonstrated dopant-segregated Schottky (DSS) p-MOSFET with gate-all-around silicon-nanowire (SiNW) channel of 10 nm in diameter. The DSS transistor shows improved performance as compared to a reference Schottky barrier (SB) transistor without dopant segregation. The DSS transistor shows I ON of 319 muA/mum at a low gate overdrive of -0.6 V, high I ON/I OFF ratio (~105), and short-channel performance with subthreshold slope ~90 mV/dec down to 100-nm gate length with relatively thick (6 nm) deposited gate oxide. The DSS transistor also shows significant reduction (~40times lower) in the series resistance as compared to the SB transistor. The origin of the improved performance of the DSS is the thin dopant layer segregated at the nickel monosilicide/SiNW point contact which results in the enhanced hole injection at the source side and the suppressed electron injection at the drain side.
Keywords :
MOSFET; Schottky barriers; nanowires; semiconductor device manufacture; Schottky barriers; dopant-segregation; gate-all-around channels; silicon-nanowire MOSFET; size 10 nm; Dopant segregation (DS); Schottky barrier (SB) MOSFET; gate-all-around (GAA); silicon nanowire (SiNW);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2022851
Filename :
5109715
Link To Document :
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