• DocumentCode
    1099448
  • Title

    Application of the DPC method to Schottky-barrier photodiode with interfacial layer

  • Author

    Hasegawa, Shigeru ; Tanaka, Akira ; Sukegawa, Tokuzo

  • Author_Institution
    Shizuoka University, Hamamatsu, Japan
  • Volume
    32
  • Issue
    3
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    711
  • Lastpage
    712
  • Abstract
    The differential photocurrent (DPC) method has been extended for the Schottky-barrier photodiode with the interfacial layer by taking the effect of the interfacial layer into account. The hole diffusion length Lpin n-type GaAs0.62P0.38layer was obtained to be 1.9 µm within the accuracy of 7 percent from the relation between the absorption coefficient α and the DPC-to-photocurrent ratio ( \\Delta I_{p}/ \\Delta W)_{W=0}/(I_{p})_{W=0} .
  • Keywords
    Absorption; Area measurement; Artificial intelligence; Electrodes; Energy measurement; Length measurement; Optical device fabrication; Photoconductivity; Photodiodes; Schottky barriers;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22002
  • Filename
    1484748
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1099448