Hydrogenated IGZO Thin-Film Transistors Using High-Pressure Hydrogen Annealing

Author

Se-I Oh ; Godeuni Choi ; Hyunsang Hwang ; Wu Lu ; Jae-hyung Jang

Author_Institution

Dept. of Inf. & Commun. & Dept. of WCU Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

Volume

60

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

2537

Lastpage

2541

Abstract

Hydrogenation of thin-film indium-gallium-zincoxide (IGZO) is carried out by applying a high-pressure hydrogen annealing (HPHA) process under 5-atm pressure at different temperatures of 260°C, 270°C, and 280°C. The HPHA effectively increases the carrier concentration and the Hall mobility up to ~ 10¹⁹ cm^-3 and ~ 6.4 cm²/Vs, respectively. The HPHA-IGZO films exhibit smoother surfaces as compared with the as-grown films. The HPHA performs at a temperature of 260 ^°C that greatly enhances the electrical characteristics of IGZO TFTs, leading to a saturation field effect mobility of 7.4 cm²/Vs, a subthreshold slope of 0.37 V/decade, a threshold voltage of 2.2 V, and an ION/IOFF of 2.0×10⁶.

Keywords

Hall mobility; annealing; gallium; hydrogenation; indium; thin film transistors; zinc compounds; HPHA process; Hall mobility; carrier concentration; electrical characteristics; high-pressure hydrogen annealing process; hydrogenated thin-film transistors; pressure 5 atm; saturation field effect mobility; subthreshold slope; temperature 260 degC; temperature 270 degC; temperature 280 degC; thin-film indium-gallium-zincoxide hydrogenation; voltage 2.2 V; Amorphous indium–gallium–zincoxide thin-film transistors (a-IGZO TFTs); high-pressure annealing; hydrogenation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2265326

Filename

6547707