Title :
Dual-polarity nonvolatile MOS analogue memory (MAM) cell for neural-type circuitry
Author :
Shimabukuro, R.L. ; Reedy, R.E. ; Garcia, G.A.
Author_Institution :
Naval Oceans Syst. Center, San Diego, CA, USA
fDate :
9/15/1988 12:00:00 AM
Abstract :
The design and fabrication of a nonvolatile MOS integrated circuit memory element which is capable of storing both positive and negative analogue data is reported. The memory value can be increased or decreased incrementally. This device is applicable to storage of weighting values in integrated circuit implementations of learning neural networks. Experimental results are reported
Keywords :
MOS integrated circuits; VLSI; analogue storage; integrated memory circuits; neural nets; VLSI; dual polarity type cell; fabrication; integrated circuit implementations; learning neural networks; negative analogue data; neural-type circuitry; nonvolatile MOS analogue memory; weighting values;
Journal_Title :
Electronics Letters
