Title :
Microwave and DC characterisation of InP/GaInAs heterostructure insulated-gate FETs employing AlInAs as gate insulator
Author :
Martin, E.A. ; Aina, O.A. ; Hempfling, E. ; Iliadis, Agis A.
Author_Institution :
Allied-Signal Aerosp. Co., Columbia, MD
fDate :
9/15/1988 12:00:00 AM
Abstract :
The authors report the DC and microwave performance of undoped InP/GaInAs heterostructure insulated-gate FETs employing undoped AlInAs as the gate insulator. Devices with a 1 μm gate length were fabricated and demonstrated extrinsic transconductances gm as high as 470 mS/mm at room temperature. Devices with a 2.5 μm gate length, suitable for microwave testing, were measured and demonstrated an extrapolated fmax=16 GHz
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; insulated gate field effect transistors; solid-state microwave devices; 1 to 2.5 micron; 16 GHz; 470 mS; AlInAs-InP-GaInAs; DC characterisation; IGFET; III-V semiconductors; SHF; extrinsic transconductances; gate length; heterostructure; insulated-gate FETs; microwave performance; undoped AlInAs gate insulator;
Journal_Title :
Electronics Letters
