Title :
Observation of negative differential resistance in Al0.2Ga0.8As/Al0.4Ga0.6 As/GaAs double barrier resonant tunnelling structure
Author :
Yang, C.H. ; Shih, H.D.
Author_Institution :
Central Res. Labs., Texas Instrum. Inc., Dallas, TX
fDate :
12/8/1988 12:00:00 AM
Abstract :
Negative differential resistance has been observed in the current/voltage characteristics of a double barrier resonant tunnelling structure with Al0.2Ga0.8As emitters, Al0.4 Ga0.6As barriers and GaAs quantum well for the first time. The NDR becomes clear at low temperatures below 77 K, and the current/voltage characteristic is asymmetric. Results demonstrate that high-quality abrupt GaAs-AlxGa1-xAs-AlyGa1-yAs heterojunctions can be of use in resonant tunnelling structures
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; negative resistance; p-n heterojunctions; tunnelling; Al0.2Ga0.8As-Al0.4Ga0.6As-GaAs; current/voltage characteristics; double barrier resonant tunnelling structure; negative differential resistance; quantum well; resonant tunnelling structures;
Journal_Title :
Electronics Letters
