Title :
Planar 3×3 array of GaInAs/InP MQW surface optical modulators grown by gas-source MBE
Author :
Rejman-Greene, M.A.Z. ; Scott, E.G. ; McGoldrick, E.
Author_Institution :
British Telecom Res. Labs., Ipswich
fDate :
12/8/1988 12:00:00 AM
Abstract :
Planar two-dimensional semiconductor arrays of optical modulators operating in the region of 1.55 μm are reported for the first time. A process is described which uses MBE-grown GaInAs/InP MQW layers, and which gives a high yield of small, low-leakage optical modulators with an absorption change in each device of 3 dB for an applied bias of -30 V
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical modulation; 1.55 micron; GaInAs-InP; III-V semiconductors; MQW; epitaxial growth; gas-source MBE; integrated optoelectronics; low-leakage; planar array; surface optical modulators; two-dimensional semiconductor arrays;
Journal_Title :
Electronics Letters
