Title :
Ambient temperature HgCdTe photoconductor can achieve detectivity higher than 1×108 cm Hz1/2/W at 10.6 μm
Author :
Piotrowski, J. ; Jaksic, Zoran ; Djinovic, Z.
fDate :
12/8/1988 12:00:00 AM
Abstract :
The authors have calculated the performance of ambient temperature long wavelength HgCdTe photoconductors as a function of material composition and doping. It has been shown that the figures of merit, both calculated and measured, are several times higher than the ones reported previously. It is concluded that an optimised ambient temperature HgCdTe photoconductor can achieve detectivity higher than 1×107 cm Hz1/2/W at λ=10.6 μm
Keywords :
II-VI semiconductors; cadmium compounds; mercury compounds; photoconducting devices; photodetectors; semiconductor doping; 10.6 micron; HgCdTe photoconductors; II-VI semiconductors; detectivity; doping; figures of merit; long wavelength; material composition; optimised ambient temperature; photodetectors;
Journal_Title :
Electronics Letters
