Novel hot-electron effects in the channel of MOSFET´s observed by capacitance measurements

Capacitance-voltage measurements were performed on small-size MOSFET´s with applied drain voltage to obtain information about hot-electron effects. The theoretical analysis shows that hot carriers cause remarkable changes 1) in the vertical and horizontal distribution of the electrons in the inversion layer, 2) in the surface potential drop, 3) in the depletion charge, and 4) in the effective threshold voltage. The influence of these hot-electron effects on the channel current is discussed.