Title :
High output power and high temperature operation of 1.5 μm DFB-PPIBH laser diodes
Author :
Kakimoto, Syoichi ; Nakajima, Yasuo ; Takemoto, Akira ; Yoshida, Naohito ; Namizaki, Hirofumi ; Susaki, Wataru
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
6/1/1989 12:00:00 AM
Abstract :
Highly efficient 1.5-μm distributed-feedback (DFB) p-substrate partially-inverted buried heterostructure laser diodes with a thin active layer developed using a metal-organic chemical vapor deposition technique are discussed. An average slope efficiency of 0.26 mW/mA (quantum efficiency 33%) and maximum slope efficiency of 0.39 mW MW/mA (49%) were achieved. The full width at half maximum in the direction perpendicular to the junction plane of 25° was obtained. A high output power of 77 mW was obtained under CW conditions at room temperature. This laser diode lased up to 120°C, and more than 10 mW was obtained, even at 90°C
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 0 to 120 degC; 1.5 micron; 33 percent; 49 percent; 77 mW; CW conditions; DFB-PPIBH laser diodes; FWHM; InGaAsP-InP; high temperature operation; metal-organic chemical vapor deposition; output power; p-substrate partially-inverted buried heterostructure; quantum efficiency; slope efficiency; Chemical vapor deposition; Diode lasers; Distributed feedback devices; Indium phosphide; Leakage current; Optical control; Optical device fabrication; Power generation; Temperature; Thickness control;
Journal_Title :
Quantum Electronics, IEEE Journal of
