DocumentCode :
1100773
Title :
In situ POCl3-doped interlevel oxidation
Author :
Huang, Tiao-yuan ; Paterson, Jim
Author_Institution :
Xerox Corporation, Palo Alto, CA
Volume :
32
Issue :
7
fYear :
1985
fDate :
7/1/1985 12:00:00 AM
Firstpage :
1357
Lastpage :
1359
Abstract :
A novel in situ POCl3-doped interlevel (IPI) method is described, in which the oxide grown during POCl3predeposition is used as the interlevel oxide. This scheme is contrary to the conventional process flow with the stripping of the oxide (phosphorus-doped silicon glass (PSG) grown during POCl3predeposition before the real interlevel oxide is grown. The new "in situ POCl3-doped" interlevel Oxidation scheme results in a simplified process flow. It is shown that good-quality interlevel oxide can be obtained by properly incorporating the POCl3predeposition into the interlevel oxidation cycle. A 38-nm oxide with a tight breakdown distribution around 24 V and leakage of 5.E-9 Amp/cm2at 12 V is demonstrated.
Keywords :
Breakdown voltage; Electric breakdown; Instruments; Oxidation; Plasma temperature; Process design; Rough surfaces; Silicon; Surface roughness; Temperature distribution;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22125
Filename :
1484871
Link To Document :
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