Title :
PbEuTe lasers with 4-6 μm wavelength made with hot-wall epitaxy
Author :
Ebe, Hiroji ; Nishijima, Yoshito ; Shinohara, Koji
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
fDate :
6/1/1989 12:00:00 AM
Abstract :
Pulse PbEuTe double-heterostructure lasers which operate at temperatures greater than 200 K in the 3.5-6.5 μm wavelength region are discussed. The lasers utilize thermoelectric coolers Pb1-xEuxTe(0⩽x⩽0.03) films with mobility between 102 and 104 cm2/V-μs were grown by hot-wall epitaxy (HWE) to fabricate these lasers. The threshold current density at 77 K was 0.5 kA/cm2 . This low value permits the laser to operate at high temperature. Laser power in pulse operation exceeded 200 μW up to 210 K
Keywords :
europium compounds; lead compounds; semiconductor growth; semiconductor junction lasers; semiconductor materials; vapour phase epitaxial growth; 200 mW; 3.5 to 6.5 micron; 30 to 250 K; PbEuTe lasers; double-heterostructure lasers; hot-wall epitaxy; laser power; mobility; pulse operation; thermoelectric coolers; threshold current density; Absorption; Apertures; Epitaxial growth; Gas lasers; Inductors; Lead; Optical pulses; Power lasers; Semiconductor lasers; Shape; Tellurium; Temperature; Thermoelectricity; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
