Title :
Spontaneous emission factor and waveguiding in GaAs/AlGaAs MQW lasers
Author :
Hausser, Stefan ; Idler, Wilfried ; Zielinski, Erich ; Pilkuhn, Manfred H. ; Weimann, Gunter ; Schlapp, W.
Author_Institution :
Phys. Inst., Stuttgart Univ., West Germany
fDate :
6/1/1989 12:00:00 AM
Abstract :
The waveguiding properties of gain-guided GaAs multiple quantum-well (MQW) lasers are investigated. Near- and far-field measurements reveal that gain guiding is much stronger in the MQW lasers than in conventional double-heterostructure lasers. The index antiguiding, however, is of the same strength in both types of lasers. Due to the altered lateral waveguiding, the astigmatism factor K is very low in the MQW lasers and has a value of K=3. As a consequence, MQW lasers exhibit very narrow far fields (θ11°), nearly single longitudinal mode operation with a sidemode suppression ratio of 1/10 and a low linewidth enhancement factor α=2
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical waveguides; semiconductor junction lasers; GaAs-AlGaAs; MQW lasers; double-heterostructure lasers; gain guiding; index antiguiding; multiple quantum-well; sidemode suppression; spontaneous emission factor; waveguiding properties; DH-HEMTs; Gain measurement; Gallium arsenide; Laser modes; Quantum well devices; Quantum well lasers; Refractive index; Semiconductor lasers; Spontaneous emission; Threshold current; Vision defects;
Journal_Title :
Quantum Electronics, IEEE Journal of
