DocumentCode :
1101218
Title :
Shortwave infrared 512 × 2 line sensor for earth resources applications
Author :
Tower, John R. ; Pellon, Leopold E. ; McCarthy, Brian M. ; Elabd, Hammam ; Moldovan, A.G. ; Kosonocky, Walter F. ; Kalshoven, James E., Jr. ; Tom, David
Author_Institution :
RCA Advanced Technology Laboratories, Moorestown, NJ
Volume :
32
Issue :
8
fYear :
1985
fDate :
8/1/1985 12:00:00 AM
Firstpage :
1574
Lastpage :
1583
Abstract :
A buttable 512 × 2 IRCCD line image sensor was developed with Pd2 Si Schottky-barrier detectors for operation with passive cooling at 120 K in the shortwave infrared (1.1-2.5 µm) band. This monolithic Silicon line imager has 30-µm detectors with 75 percent fill factor and on-chip CCD multiplexers providing one video output for each 512 detector band. The measured performance of the 512 × 2 Pd2 Si IRCCD line imager operating at a temperature of 120 K and optical integration time of 4 ms includes a signal-to-noise ratio of 241 for irradiance of 
W/cm2at 
m, a dynamic range of 5000, and modulation transfer function greater than 60 percent at the Nyquist frequency. Belmish-free imagers with 3 percent nonuniformity under illumination and nonlinearity of 1.25 percent were produced. The total power dissipation of the imager chip is 18 mW.
W/cm2at m, a dynamic range of 5000, and modulation transfer function greater than 60 percent at the Nyquist frequency. Belmish-free imagers with 3 percent nonuniformity under illumination and nonlinearity of 1.25 percent were produced. The total power dissipation of the imager chip is 18 mW.Keywords :
Charge coupled devices; Cooling; Earth; Frequency measurement; Infrared detectors; Infrared image sensors; Infrared sensors; Multiplexing; Silicon; Time measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22166
Filename :
1484912
Link To Document :
