Title :
Peculiar features of InGaAsP DH superluminescent diodes
Author :
Joindot, I.M. ; Boisrobert, C.Y.
Author_Institution :
CNET, Lannion, France
fDate :
7/1/1989 12:00:00 AM
Abstract :
An experimental study of 1.3 μm proton-implanted buried heterostructure superluminescent diodes is discussed. Dominant physical trends in their behavior are reported. Proton implantation of part of the stripe near the back facet is used to prevent oscillations due to residual reflections. Gain and losses predictions from the two regions (the active and passive waveguides) show that the absorption edge is not as sharp as expected and that a parabolic band model would not be adequate in that particular case. Examination of the relative intensity noise (RIN) from the front and back facets indicates that the RIN carried by the radiation coming from the rear facet is much higher than the RIN carried by the front-facet radiation
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; semiconductor junction lasers; superradiance; 1.3 micron; InGaAsP-InP double heterojunction diodes; absorption edge; active waveguide; buried heterostructure superluminescent diodes; gain; parabolic band model; passive waveguide; proton implantation; relative intensity noise; residual reflections; Acoustic reflection; DH-HEMTs; Optical feedback; Optical fiber communication; Optical noise; Optical reflection; Protons; Semiconductor device noise; Semiconductor diodes; Superluminescent diodes;
Journal_Title :
Quantum Electronics, IEEE Journal of
