• DocumentCode
    1102091
  • Title

    Monte Carlo simulation of the photoelectron crosstalk in silicon imaging devices

  • Author

    Lavine, James P. ; Chang, Win-Chyi ; Anagnostopoulos, Constantine N. ; Burkey, Bruce C. ; Nelson, Edward T.

  • Author_Institution
    Eastman Kodak Company, Rochester, NY
  • Volume
    32
  • Issue
    10
  • fYear
    1985
  • fDate
    10/1/1985 12:00:00 AM
  • Firstpage
    2087
  • Lastpage
    2091
  • Abstract
    The Monte Carlo method is used to evaluate the extent of the crosstalk in solid-state imagers. The calculations are performed in three dimensions and are in excellent agreement with experiment. The Monte Carlo method is used because it handles adjacent regions that either collect or reflect minority carriers.
  • Keywords
    Alpha particles; Bipolar transistors; Boundary conditions; Crosstalk; Monte Carlo methods; Optical imaging; Semiconductor memory; Silicon; Solid state circuits; Testing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22243
  • Filename
    1484989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1102091