Title :
Monte Carlo simulation of the photoelectron crosstalk in silicon imaging devices
Author :
Lavine, James P. ; Chang, Win-Chyi ; Anagnostopoulos, Constantine N. ; Burkey, Bruce C. ; Nelson, Edward T.
Author_Institution :
Eastman Kodak Company, Rochester, NY
fDate :
10/1/1985 12:00:00 AM
Abstract :
The Monte Carlo method is used to evaluate the extent of the crosstalk in solid-state imagers. The calculations are performed in three dimensions and are in excellent agreement with experiment. The Monte Carlo method is used because it handles adjacent regions that either collect or reflect minority carriers.
Keywords :
Alpha particles; Bipolar transistors; Boundary conditions; Crosstalk; Monte Carlo methods; Optical imaging; Semiconductor memory; Silicon; Solid state circuits; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22243
