DocumentCode :
1102266
Title :
Buried refractive microlenses formed by selective oxidation of AlGaAs
Author :
Blum, O. ; Lear, K.L. ; Hou, H.Q. ; Warren, M.E.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
32
Issue :
15
fYear :
1996
fDate :
7/18/1996 12:00:00 AM
Firstpage :
1406
Lastpage :
1408
Abstract :
The authors demonstrate a novel method of fabricating buried refractive microlenses formed by selective oxidation of AlGaAs epitaxial layers on a GaAs substrate. By appropriate tailoring of the Al mole fraction in the vertical direction, a lens-shaped oxidation shape was achieved. Performance of the microlenses formed in this way was experimentally evaluated at 980 nm, and modelled theoretically
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser accessories; lenses; oxidation; semiconductor lasers; surface emitting lasers; 980 nm; AlGaAs-GaAs; VCSELs; buried refractive microlenses; lens-shaped oxidation shape; mole fraction; selective oxidation; vertical direction;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960887
Filename :
511149
Link To Document :
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