• DocumentCode
    1102295
  • Title

    Current-dependent silicon oxide growth during scanned probe lithography

  • Author

    Ruskell, T.G. ; Pyle, J.L. ; Workman, R.K. ; Yao, X. ; Sarid, D.

  • Author_Institution
    Optical Sci. Center, Arizona Univ., Tucson, AZ, USA
  • Volume
    32
  • Issue
    15
  • fYear
    1996
  • fDate
    7/18/1996 12:00:00 AM
  • Firstpage
    1411
  • Lastpage
    1412
  • Abstract
    Measurement of picoAmp currents during silicon oxide growth by scanning probe lithography is reported. The observed current is attributed to the reduction of H- ions produced by the oxidation process. The local electrical quality of the nanofabricated oxide lines, probed by local Fowler-Nordheim tunnelling, is found to be uniform and highly insulating
  • Keywords
    lithography; nanotechnology; oxidation; scanning probe microscopy; silicon compounds; tunnelling; Fowler-Nordheim tunnelling; H- ion reduction; SiO2; electrical quality; insulating lines; nanofabrication; oxidation; picoAmp currents; scanned probe lithography; silicon oxide growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960882
  • Filename
    511152
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1102295