IIA-2 OMCVD Grown high gain modulation doped AlGaAs/GaAs transistors with no I-V collapse

Author

Bhat, Ritesh ; Chan, W.K. ; Kastalsky, A. ; Koza, M.A.

Volume

Issue

fYear

1985

fDate

11/1/1985 12:00:00 AM

Firstpage

2528

Lastpage

2528

Keywords

Cryogenics; Epitaxial layers; FETs; Frequency; Gallium arsenide; HEMTs; MESFETs; National electric code; Noise figure; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1985.22308

Filename

1485054

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