IIA-1 is HEMT really a high electron mobility transistor?—Proposal of a new GaAs MESFET structure which can give a higher gmthan HEMT

Author

Hasegawa, Fumihiro

Volume

Issue

fYear

1985

fDate

11/1/1985 12:00:00 AM

Firstpage

2528

Lastpage

2528

Keywords

Doping; Electron devices; Electron mobility; Epitaxial layers; Gallium arsenide; HEMTs; MESFETs; MODFETs; Neodymium; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1985.22310

Filename

1485056

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