DocumentCode :
1102924
Title :
IIB-1 the role of stress in two-dimensional silicon oxidation
Author :
Saraswat, Krishna C. ; McVittie, James P. ; Nix, W.D.
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2530
Lastpage :
2531
Keywords :
Doping; EPROM; Etching; Oxidation; Semiconductor process modeling; Silicon; Stress; Temperature; Testing; Viscosity;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22316
Filename :
1485062
Link To Document :
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