DocumentCode :
1102961
Title :
IIB-4 CMOS well drive-in NH3for reduced lateral diffusion and heat cycle
Author :
Wong, S. Simon
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2532
Lastpage :
2532
Keywords :
Boron; FETs; Fabrication; Gas lasers; Implants; Ion implantation; Resists; Tail; Thermal resistance; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22320
Filename :
1485066
Link To Document :
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