DocumentCode

1102989

Title

IIB-6 shallow p⁺-n junction for CMOS VLSI application using germanium preamorphization

Author

Liu, Jiangchuan ; Wortman, J.J. ; Fair, R.B.

Volume

32

Issue

11

fYear

1985

fDate

11/1/1985 12:00:00 AM

Firstpage

2533

Lastpage

2533

Keywords

Fabrication; Germanium; Heat treatment; Implants; Ion implantation; Leakage current; Rapid thermal annealing; Silicon; Temperature; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1985.22322

Filename

1485068