DocumentCode
1103072
Title
IIIA-8 front-side illuminated InP/GaInAs/InP p-i-n photodiode with FWHM < 26 picoseconds
Author
Wang, S.Y.
Volume
32
Issue
11
fYear
1985
fDate
11/1/1985 12:00:00 AM
Firstpage
2535
Lastpage
2536
Keywords
Delay effects; Delay estimation; Epitaxial growth; Epitaxial layers; High speed optical techniques; Indium phosphide; Laboratories; PIN photodiodes; Ultrafast optics; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22330
Filename
1485076
Link To Document