DocumentCode

1103150

Title

IIIB-6 a nonsubstrate bias effect MOS transistor

Author

Sakai, Yoshiki

Volume

32

Issue

11

fYear

1985

fDate

11/1/1985 12:00:00 AM

Firstpage

2538

Lastpage

2538

Keywords

Contact resistance; Electron devices; Logic devices; MOS devices; MOSFET circuits; Performance evaluation; Silicon; Standards development; Superlattices; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1985.22337

Filename

1485083