Title :
IVB-1 electrical properties of thin oxides (80-90 Å) processed by a two-step oxidation treatment
Author :
Bhattacharyya, A. ; Vorst, C.
fDate :
11/1/1985 12:00:00 AM
Keywords :
Annealing; Argon; Breakdown voltage; Degradation; Dielectrics; Electron mobility; Laboratories; Oxidation; Temperature distribution; Voltage measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22346
