Title :
IVB-4 Characterization and two-dimensional simulation of impact ionization current in MOSFET´s between 77 and 300 K
Author :
Henning, A.K. ; Plummer, James D. ; Chan, N.
fDate :
11/1/1985 12:00:00 AM
Keywords :
CMOS technology; Circuits; Electrons; Impact ionization; MOSFETs; Nitrogen; Predictive models; Semiconductor device modeling; Temperature distribution; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22349
