DocumentCode
1103379
Title
VA-6 temperature-dependent properties of the double HBJT
Author
Tiwari, Sunita ; Wright, S.L. ; Kleinsasser, A.
Volume
32
Issue
11
fYear
1985
fDate
11/1/1985 12:00:00 AM
Firstpage
2546
Lastpage
2547
Keywords
Contact resistance; Current density; Doping; Gallium arsenide; Implants; Rapid thermal annealing; Temperature distribution; Thermal resistance; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22358
Filename
1485104
Link To Document