Title :
VA-7 self-aligned substitutional emitter process for GaAs/(GaAl)As heterojunction bipolar transistors
Author :
Chang, M.F. ; Asbeck, P.M. ; Miller, Douglas L. ; Wang, K.C.
fDate :
11/1/1985 12:00:00 AM
Keywords :
Bipolar transistors; Contact resistance; Etching; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Implants; Lithography; Materials science and technology; Resists;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22359
