DocumentCode
1103440
Title
VB-2 a three-dimensional merged vertical bipolar-MOS device in recrystallized silicon
Author
Sturm, James C. ; Gibbons, J.F.
Volume
32
Issue
11
fYear
1985
fDate
11/1/1985 12:00:00 AM
Firstpage
2548
Lastpage
2548
Keywords
Aluminum; Bipolar transistors; CMOS logic circuits; Fabrication; Logic devices; MOS devices; Semiconductor films; Silicon; Surface emitting lasers; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22364
Filename
1485110
Link To Document