DocumentCode
110345
Title
Parametric Measurements of Switching Losses of Insulated Gate Bipolar Transistor in Pulsed Power Applications
Author
Strowitzki, Claus Fritz
Author_Institution
MLase AG Dev., Germering, Germany
Volume
41
Issue
10
fYear
2013
fDate
Oct. 2013
Firstpage
2614
Lastpage
2618
Abstract
Insulated gate bipolar transistors (IGBTs) are the workhorse in power electronics. Due to recent improvements in IGBTs, they also find many applications in the field of pulsed power. The switching losses of an IGBT are normally given from the supplier, but not from typical converter applications. These data are not valid for pulsed power applications. In this paper, parametric measurements of turn-on losses are shown for IGBTs in a typical pulsed power application.
Keywords
insulated gate bipolar transistors; measurement systems; power electronics; pulsed power technology; IGBT; converter applications; insulated gate bipolar transistors; parametric measurements; power electronics; pulsed power applications; switching losses; turn-on losses; Current measurement; Insulated gate bipolar transistors; Logic gates; Loss measurement; Magnetic cores; Switching loss; Temperature measurement; Component; insulated gate bipolar transistor (IGBT); switching losses; turn-on losses;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/TPS.2013.2251678
Filename
6488868
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