Title :
Improved reverse blocking characteristics in AlGaN=GaN Schottky barrier diodes based on AlN template
Author :
Miyoshi, M. ; Kuraoka, Y. ; Asai, K. ; Shibata, T. ; Tanaka, M. ; Egawa, T.
Author_Institution :
NGK Insulators Ltd., Nagoya
Abstract :
AlGaN/GaN-based planer Schottky barrier diodes (SBDs) with circular anode configuration were formed on AIN template and on sapphire. SBDs formed on AIN template exhibited clearly improved reverse-blocking characteristics compared with SBDs formed on sapphire. This appears to be due to their high crystal quality realised as a result of using AIN template. Breakdown voltages in those SBDs increased with the anode-to-cathode spacing and reached a high value of approximately 3 kV at a gap-spacing of 50 mum for SBDs formed on AIN template.
Keywords :
Schottky barriers; Schottky diodes; aluminium compounds; anodes; cathodes; gallium; AIN template; AlGaN-GaN; Schottky barrier diode; anode-to-cathode spacing; circular anode configuration; high crystal quality; reverse blocking; size 50 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071141