The effect of body resistance on the breakdown characteristics of SOI MOSFET´s

Author

Suh, Dongwook ; Fossum, Jerry G.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

41

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

1063

Lastpage

1066

Abstract

The drain-source breakdown of (nonfully depleted) SOI MOSFET´s is analyzed with attention paid to the body (to source) resistance, R_B. Simple but physical characterizations of the holding voltage and the snapback voltage in terms of device parameters are derived. The physical insight afforded reveals that the snapback characteristic is an inherent effect of finite R_B. The holding voltage increases with decreasing R_B, but for submicron devices the increase is not significant unless R_B is decreased well below values achieved with typical intrinsic body-to-source ties having acceptable (limited) widths

Keywords

impact ionisation; insulated gate field effect transistors; semiconductor-insulator boundaries; silicon; SOI MOSFETs; body resistance; breakdown characteristics; device parameters; drain-source breakdown; holding voltage; intrinsic body-to-source ties; snapback voltage; submicron devices; Breakdown voltage; Detectors; Electric breakdown; Immune system; Infrared imaging; MOSFET circuits; Multiplexing; Optical noise; Temperature; Transfer functions;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.293322

Filename

293322