Nonquasi-static effects in saturated bipolar circuits

Author

Wu, B.S. ; Chuang, C.T. ; Lu, P.F.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

41

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

1069

Lastpage

1072

Abstract

A nonquasi-static (NQS) model accounting for intrinsic carrier propagation delays in both B/E and B/C junctions is implemented in the ASTAP circuit simulator to evaluate the impact of non-quasi-static effects in saturated bipolar circuits. It is shown that while the extra delay introduced by the NQS effects during the turn-on transition is primarily due to the normal mode B/E NQS delay time, the more severe NQS delay in the turnoff transition is caused mainly by the removal of the saturation overdrive charges and the longer inverse mode B/C NQS delay time

Keywords

bipolar transistor circuits; circuit analysis computing; logic gates; semiconductor device models; ASTAP circuit simulator; B/C junctions; B/E junctions; intrinsic carrier propagation delays; inverse mode B/C NQS delay time; nonquasistatic model; normal mode B/E NQS delay time; saturated bipolar circuits; saturated inverter; saturation overdrive charges; turn-on transition; Analog circuits; Circuit simulation; Delay effects; Digital circuits; Electrical resistance measurement; Inverters; Kirk field collapse effect; Monitoring; Propagation delay; Voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.293324

Filename

293324