Title :
High frequency performance of SiC heterojunction bipolar transistors
Author :
Gao, Guang-bo ; Sterner, Jeffery ; Morkoç, Hadis
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
fDate :
7/1/1994 12:00:00 AM
Abstract :
A compact heterojunction bipolar transistor (HBT) model was employed to simulate the high frequency and high power performances of SiC-based bipolar transistors. Potential 6H-SiC/3C-SiC heterojunction bipolar transistors (6H/3C-HBT´s) at case temperatures of 27°C (300 K) through 600°C (873 K) were investigated. The high frequency and high power performance was compared to AlGaAs/GaAs HBT´s. As expected, the ohmic contact resistance limits the high frequency performance of the SiC HBT. At the present time, it is only possible to reliably produce 1×10-4 Ω-cm2 contact resistances on SiC, so an fT of 4.4 GHz and an fmax of 3.2 GHz are the highest realistic values. However, assuming an incredibly low 1×10-6 Ω-cm2 contact resistance for the emitter, base, and collector terminals, an fT of 31.1 GHz and an fmax of 12.7 GHz can be obtained for a 6H/3C-SiC HBT
Keywords :
contact resistance; heterojunction bipolar transistors; ohmic contacts; power transistors; semiconductor device models; semiconductor materials; silicon compounds; solid-state microwave devices; 12.7 GHz; 27 C; 3.2 GHz; 31.1 GHz; 4.4 GHz; 600 C; HBT model; SiC; SiC heterojunction bipolar transistors; base; case temperatures; collector terminals; compact heterojunction bipolar transistor; emitter; high frequency performance; high power performances; ohmic contact resistance; Bipolar transistors; Contact resistance; Electron mobility; FETs; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Photonic band gap; Silicon carbide; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
