• DocumentCode
    1103720
  • Title

    A high-frequency GaAs optical guided-wave electrooptic interferometric modulator

  • Author

    Donnelly, J.P. ; Demeo, N.L. ; Ferrante, G.A. ; Nichols, K.B.

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, MA, USA
  • Volume
    21
  • Issue
    1
  • fYear
    1985
  • fDate
    1/1/1985 12:00:00 AM
  • Firstpage
    18
  • Lastpage
    21
  • Abstract
    The characteristics and frequency response of a GaAs monolithic guided-wave interferometric modulator operating at 1.3 μm are presented. The interfetometer consists of three-guide coupler input and output sections and single-mode p+-n--n+ slab-coupled rib-waveguide active arms. The measured electrical bandwidth of an interferometer with 2 mm long active arms was 2.2 GHz and limited by parasitics. This corresponds to a small signal optical bandwidth of ≈ 3.0 GHz when the interferometer is biased in a linear portion of the optical output versus voltage characteristics. Reduction of parasitics should result in a substantial increase in the bandwidth of these devices.
  • Keywords
    Electrooptic modulation; Gallium materials/devices; Infrared interferometry; Optical strip waveguide components; Arm; Bandwidth; Electrooptic effects; Electrooptic modulators; Etching; Gallium arsenide; High speed optical techniques; Optical interferometry; Optical modulation; Optical waveguides;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1985.1072541
  • Filename
    1072541