• DocumentCode
    1103728
  • Title

    HBT Modeling

  • Author

    McMacken, John ; Nedeljkovic, Sonja ; Gering, Joe ; Halchin, Dave

  • Author_Institution
    RFMD, Greensboro
  • Volume
    9
  • Issue
    2
  • fYear
    2008
  • fDate
    4/1/2008 12:00:00 AM
  • Firstpage
    48
  • Lastpage
    71
  • Abstract
    III-V heterojunction bipolar transistors (HBTs) enjoy several advantages over their conventional silicon cousins. These include: (1) a thinner base and lower base resistance which yields higher gain and fmax; (2) high breakdown voltage; (3) low parasitics; (4) high power density. The combination of a thin base (higher fT), low base resistance (higher fmax), and low parasitics in particular make HBTs a suitable choice for high- frequency applications.
  • Keywords
    III-V semiconductors; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor device models; HBT modeling; III-V heterojunction bipolar transistors; breakdown voltage; high power density; low base resistance; low parasitics; Charge carrier processes; FETs; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Molecular beam epitaxial growth; PHEMTs; Photonic band gap; Silicon; Substrates;
  • fLanguage
    English
  • Journal_Title
    Microwave Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1527-3342
  • Type

    jour

  • DOI
    10.1109/MMM.2008.915366
  • Filename
    4472318
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1103728