Title :
Modeling of the hot electron subpopulation and its application to impact ionization in submicron silicon devices-Part II: numerical solutions
Author :
Scrobohaci, Paul G. ; Tang, Ting-wei
Author_Institution :
Technol. Modeling Assoc., Palo Alto, CA, USA
fDate :
7/1/1994 12:00:00 AM
Abstract :
A macroscopic transport model for the hot electron subpopulation (HES) and a nonlocal impact ionization (II) model were proposed in Part I of this article: see ibid. p. 1200, 1994. The transport equations have been derived from the Boltzmann transport equation (BTE) and closure has been provided by an empirically determined equation. The transport equations and the II model have been calibrated using data obtained from self-consistent Monte Carlo (SCMC) simulations. In this article we present the numerical solutions obtained by applying the proposed model to n+- n--n+ structures with various doping profiles. The results are compared to the data obtained from SCMC simulations and also to those obtained from models proposed earlier by other authors
Keywords :
Boltzmann equation; Monte Carlo methods; doping profiles; hot carriers; impact ionisation; numerical analysis; semiconductor device models; silicon; Boltzmann transport equation; calibrated; doping profiles; hot electron subpopulation; impact ionization; macroscopic transport model; n+- n--n+ structures; nonlocal impact ionization model; numerical solutions; self-consistent Monte Carlo simulations; submicron silicon devices; transport equations; Boltzmann equation; Boundary conditions; Distributed computing; Doping profiles; Electrons; High definition video; Impact ionization; Monte Carlo methods; Semiconductor process modeling; Silicon devices;
Journal_Title :
Electron Devices, IEEE Transactions on
