Title :
Theory and application of charge pumping for the characterization of Si-SiO2 interface and near-interface oxide traps
Author :
Paulsen, Ronald E. ; White, Marvin H.
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Lehigh Univ., Bethlehem, PA, USA
fDate :
7/1/1994 12:00:00 AM
Abstract :
A generalized charge pumping model has been developed which extends the use of charge pumping from a study of traps at the Si-SiO 2 interface to a study of traps in the oxide. The analytical model, based on tunneling theory, allows the spatial distribution of near-interface oxide traps to be determined from variable frequency charge pumping data. Profiling of near-interface oxide traps in irradiated MOSFET´s as well as SONOS nonvolatile memory devices is presented
Keywords :
electron traps; hole traps; insulated gate field effect transistors; radiation effects; semiconductor device models; semiconductor storage; semiconductor-insulator boundaries; silicon; silicon compounds; tunnelling; SONOS nonvolatile memory devices; Si-SiO2; Si-SiO2 interface characterisation; analytical model; charge pumping model; irradiated MOSFET; near-interface oxide traps; tunneling theory; Charge carrier processes; Charge pumps; Electron emission; Electron traps; Frequency; Nonvolatile memory; Pulse measurements; Region 1; SONOS devices; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
